Class E Power Amplifier

This article details the design of class E power amplifier.

Calculation

Schematic of class E PA

In the analysis, all the time variable $t$ is replaced with conduction angle $\theta$.

It is apparent that $i(\theta)$ is composed of two component, namely

With the normalization $m=I_{rf}/I_{dc}$, we can write

The current waveform is as follows

Current waveform

The switched transistor turn on from $-\alpha_1$ to $\alpha_2$, where all the current flow through the transistor, and thus the $i_{sw}(\theta)$ replicates $i(\theta)$. Similarly, for the duration from $\alpha_2$ till $2\pi-\alpha_2$.

The conduction angle is defined as

From the peak current, we have

From the initial condition $I_{dc}(1+m\cos\alpha_1)=0$, we have

Since the average current flow through the transistor equals to $I_{dc}$, we have

Combined with aforementioned equations, it leads to

or

or

where we established the connection between the conduction angle and the peak/average ratio. Note that this requirement also ensures that $\int_{\alpha_2}^{2\pi-\alpha_1} i_c(\theta) d\theta=0$ and $v_C(2\pi-\alpha_2)=0$.

The voltage can be written as

The voltage waveform is as follows

Voltage waveform

The average DC value is

The in-phase component

The quadrature component

Power deliver to the load is therefore

and the DC power consumption is

The two are identical, and thus the efficiency is 100%.

To calculate the required output impedance

Output impedance calculation

we may write

Real and imaginary parts are

where $I=mI_{dc}$.

Design Consideration

The peak voltage is

The peak current is

Thus, equivalent class A PA can deliver a power of

It can be demonstrated that as the conduction angle increases, both the voltage peak-to-average ratio and the PUF (Power Utilization Factor, compared to class A PA with the same $V_{pk}$ and $I_{pk}$) increases.

Peak-to-average ratio and PUF vs conduction angle

The Mathematica code is as follows

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a1 = ArcTan[-((2 Pi + Sin[phi] - phi)/(1 - Cos[phi]))] + Pi;
a2 = phi - a1;
m = -1/Cos[a1];
Vpk = (a1 - a2 + m (Sin[a1] - Sin[a2]));
Vdc = (1/2/Pi) (m/2) (m (Sin[a1]^2 - Sin[a2]^2) +
2 (Cos[a2] - Cos[a1]));
Ipk = m + 1;
Pa = 1/8 Vpk Ipk;
Pe = Vdc;
Plot[{Vpk/Vdc, 10 Log10[Pe/Pa]}, {phi, 0, Pi},
PlotLegends -> {"Vpk/Vdc", "PUF"}]

Required load

Load impedance vs conduction angle

The Mathematica code is as follows

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a1 = ArcTan[-((2 Pi + Sin[phi] - phi)/(1 - Cos[phi]))] + Pi;
a2 = phi - a1;
m = -1/Cos[a1];
Vci = -1/2/Pi (m (Sin[a1]^2 - Sin[a2]^2) + 2 (Cos[a2] - Cos[a1]));
Vcq = 1/2/
Pi ((m^2 - 2) (Sin[a1] + Sin[a2]) - m/2 (Sin[2 a1] + Sin[2 a2]));
Plot[{-Vci/m, Vcq/m}, {phi, 0, Pi}, PlotLegends -> {"Real", "Imag"}]

Design Example

Steps

  1. Choose the conduction angle $\phi$, and calculate normalized parameters. For instance, for a conduction angle of 125°.

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    a1 = ArcTan[-((2 Pi + Sin[phi] - phi)/(1 - Cos[phi]))] + Pi;
    a2 = phi - a1;
    m = -1/Cos[a1];
    Vdc = (1/2/Pi) (m/2) (m (Sin[a1]^2 - Sin[a2]^2) +
    2 (Cos[a2] - Cos[a1]));
    Ipk = m + 1;
    Vci = -1/2/Pi (m (Sin[a1]^2 - Sin[a2]^2) + 2 (Cos[a2] - Cos[a1]));
    Vcq = 1/2/
    Pi ((m^2 - 2) (Sin[a1] + Sin[a2]) - m/2 (Sin[2 a1] + Sin[2 a2]));
    Rl = -Vci/m;
    Xl = Vcq/m;
    {Vdc, Ipk, Rl, Xl} /. phi -> 125/180 Pi // N
    (* result: {1.36071, 4.28307, 0.252485, 0.532716} *)
  2. Scaling the parameters

    1. Scale the $I_{pk}$ by $I_{dc}$
    2. Scale the $V_{dc}$ by $I_{dc}/(\omega C_p)$
    3. Scale the impedances by $1/(\omega C_p)$

    For instance, for a actual $I_{pk}=1,V_{dc}=4.8$, the voltage need to be scaled by 4.8/1.36, the current need to be scaled by 1/4.28, and the impedances need to be scaled by 15.1.

Verification

Schematic of an ideal class E PA

The simulation results are as follows:

Simulated result of the ideal PA

The oscillating problem can be alleviated by reducing the capacitor from 12.4 pF to 10.4 pF.

Simulated result of the ideal PA with tuning

If we adopt a real transistor

Schematic of a real class E PA in 180nm CMOS

The simulated performance is

Simulated result of the real PA

It delivers 19 dBm output power with DE of 82% at 850 MHz.

Reference

  1. S. C. Cripps. RF Power Amplifier for Wireless Communications. Artech House, 2014.
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